Method of manufacturing a magnetic head using a magneto-resistive effect

ABSTRACT

A method of manufacturing a magnetic head including a magnetic sensing portion formed of a magnetoresistive effect element, a magnetoresistive effect magnetic head manufacturing method depositing, via a film deposition process, a lamination layer having a free layer comprised of a soft magnetic material of which the magnetization is rotated in response to an external magnetic field, a fixed layer comprised of a ferromagnetic material, an antiferromagnetic layer for fixing the magnetization of said fixed layer, a magnetic flux introducing layer with a tip end of which is opposed to a surface which is brought in contact with or opposed to a magnetic recording medium, and a spacer layer interposed between said free layer and said fixed layer; patterning at least said free layer and said fixed layer with a mask such that opposing side surfaces of said free layer and said fixed layer are formed of one continuous surface; and forming hard magnetic layers having high or low resistance for maintaining a magnetic stability of said free layer in contact with said opposing side surfaces.

RELATED APPLICATION DATA

This application is a continuation-in-part of International PatentApplication. No. PCT/JP01/09734, filed Nov. 7, 2001. The present andforegoing applications claim priority to Japanese Patent Application No.P2000-340636, filed Nov. 8, 2000. All of the foregoing applications areincorporated herein for all purposes by reference to the extentpermitted by law.

TECHNICAL FIELD

The present invention relates to a magneto-resistive effect element (MRelement) for detecting an external magnetic field and particularlyrelates to a magnetic head using magneto-resistive effect, that is, amagnetic head using magneto-resistive effect including a GMR (GiantMagneto-resistive) element having a spin-valve type magneto-resistiveeffect element (SVMR) configuration or an MR element having a tunneltype MR (TMR) configuration having a tunnel barrier film as a magneticsensing portion and a manufacturing method thereof.

BACKGROUND OF THE INVENTION

A spin-valve type magneto-resistive effect element or an MR elementhaving a tunnel type MR (TMR) configuration including a tunnel barrierfilm includes a lamination layer structure portion in which a free layermade of a soft magnetic material the magnetization of which is rotatedin response to an external magnetic field, a fixed layer made of aferromagnetic material, an antiferromagnetic layer for fixing themagnetization of this fixed layer and a nonmagnetic conductive layer ortunnel barrier layer interposed between the free layer and the fixedlayer are laminated with each other.

In this configuration, the magneto-resistive effect element having aso-called CIP (Current In Plane) type configuration in which a sensecurrent, i.e., a detection current for detecting the change ofresistance flows though the plane direction of the lamination layerstructure portion inevitably needs a relatively large width, i.e., largearea in order to obtain a predetermined conducting sectional area by across-section in the film thickness direction.

Further, in the case of the CIP configuration, since upper and lowerportions are sandwiched by insulating materials, heat radiation propertyis poor and hence there arises a problem of a reliability such as a riskin which the films will be fused when the magneto-resistive effectelement or the magnetic head using magneto-resistive effect is beingcontinuously used during a long period of time.

On the other hand, the magneto-resistive effect element has a so-calledCPP (Current Perpendicular to Plane) type configuration in which a sensecurrent flows through the lamination layer direction of theabove-mentioned lamination layer structure portion, i.e., in thedirection perpendicular to the lamination layer film can decrease itsarea. In a magnetic head, for example, since its magnetic sensingportion can be made compact in size, the whole of the magneto-resistiveeffect element can be reduced in size. In accordance therewith, thisbecome advantageous in increasing a recording density.

Moreover, since the conducting electrodes are disposed at both surfacesof the lamination layer structure portion, this magneto-resistive effecttype element is excellent in heat radiation property, can be operatedstably and is highly reliable.

In the GMR effect element having the SVMR configuration or the MR effectelement having the TMR configuration, the hard magnetic layer which ismagnetized in the predetermined direction is disposed in order tomaintain the magnetic stability of the free layer. This hard magneticlayer can cancel a magnetic domain produced at the end portion of thefree layer and can suppress a Barkhausen noise caused due todiscontinuity of magnetization rotation by a magnetic domain existing atthe end portion of the free layer when an external magnetic field, i.e.,a signal magnetic field from a magnetic recording medium is introducedinto this free layer.

Since a hard magnetic layer having a high electric conductivity isgenerally used as this hard magnetic layer, in general, in the CPP typemagnetic head, the hard magnetic layer is disposed so as to oppose toonly the free layer. This free layer is projected to the side of otherlamination film having a conductivity comprising the lamination layerstructure portion. In this projected portion, the free layer is broughtin contact with the hard magnetic layer so that the occurrence of aleakage of a sense current which directly flows through this hardmagnetic layer to other lamination layer film having a conductivitybypassing the free layer can be avoided. Thus, it is possible to avoid amagneto-resistive conversion efficiency from being lowered due to thisleakage current.

However, as described above, when the width of the free layer is madelarge, since the width of the free layer is increased, the width of themagneto-resistive effect element cannot be reduced sufficiently and theexternal magnetic field cannot be concentrated sufficiently. Then, therearises a problem in which an efficiency of a magneto-resistive effectcannot be improved sufficiently.

The present invention is to provide a magnetic head usingmagneto-resistive effect having fundamentally an SVMR configuration or aTMR configuration and a manufacturing method thereof in which theabove-mentioned disadvantages can be removed.

SUMMARY OF INVENTION

A magneto-resistive effect element according to the present inventionhas an SVMR or TMR lamination layer structure portion in which at leasta free layer made of a soft magnetic material of which the magnetizationis rotated in response to an external magnetic field, a fixed layer madeof a ferromagnetic material, an antiferromagnetic layer for fixing themagnetization of this fixed layer, a spacer layer interposed between thefree layer and the fixed layer, i.e., nonmagnetic conductive layer or atunnel barrier layer are laminated with each other. In particular, thelamination layer structure portion has opposing side surfaces of oneplane or continuous one surface formed over at least the free layer, thespacer layer and the fixed layer along its lamination layer direction.

Then, a hard magnetic layer of high resistance or low resistance formaintaining a magnetic stability of the free layer, i.e., a hardmagnetic layer which is magnetized in order to apply a bias magneticfield to the free layer is disposed in direct contact with theseopposing side surfaces or through an insulating layer.

Then, a sense current flows through nearly the lamination layerdirection of the lamination layer structure portion comprising this SVMRor TMR, and an external magnetic field is applied to the directionextending along the plane direction of its lamination layer structureportion and in the direction substantially extending along theabove-mentioned opposing side surfaces.

Moreover, the magneto-resistive effect element according to the presentinvention may have a dual type lamination layer structure portion inwhich SVMRs or TMRs are formed at both surfaces of a common free layer.

Specifically, in this case, the magneto-resistive effect elementaccording to the present invention may have the lamination layerstructure portion in which first and second fixed layers made offerromagnetic materials, first and second antiferromagnetic layers forfixing the magnetizations of the fixed layers and first and secondspacer layers interposed between the free layer and the above-describedfirst and second fixed layers, i.e., nonmagnetic conductive layers ortunnel barrier layers are laminated with each other at both surfaces ofa free layer made of a soft magnetic material of which the magnetizationis rotated in response to an external magnetic field.

This lamination layer structure portion has an configuration in whichopposing side surfaces of one flat surface or a continuous one curvedsurface are formed over at least the free layer, the first and secondspacer layers disposed across this free layer and the first and secondfixed layers in its lamination layer direction.

Then, a hard magnetic layer of high resistance or low resistance formaintaining a magnetic stability of the free layer is disposed in directcontact with these opposing side surfaces or through an insulatinglayer.

Then, a sense current flows nearly the lamination layer direction of thelamination layer structure portion having this SVMR configuration or TMRconfiguration, and the external magnetic field is applied to thedirection extending along the plane direction of the lamination layerstructure portion and in the direction extended substantially along theabove-mentioned opposing side surfaces.

In a magnetic head using magneto-resistive effect according to thepresent invention, a magnetic sensing portion which generates the changeof resistance by a signal magnetic field introduced from a magneticrecording medium has the configuration of each magneto-resistive effectelement based upon the above-mentioned SVMR configuration or TMRconfiguration,

Then, in the magnetic heads according to the present invention, a freelayer of a lamination layer structure portion which comprises theabove-mentioned magnetic sensing portion is formed as a magnetic layerfor introducing an external magnetic field and one end of the magneticlayer is opposed to a surface which is brought in contact with or whichis opposed to a magnetic recording medium.

Alternatively, there is provided a side surface which crosses the sidesurface in which the hard magnetic layer is disposed and which alsocrosses the lamination layer direction, and this side surface is opposedto a surface which is directly brought in contact with or which isopposed to a magnetic recording medium.

A manufacturing method according to the present invention is a method ofmanufacturing a magneto-resistive effect element or a magnetic headusing magneto-resistive effect according to the present invention. Thismagneto-resistive effect element or a magnetic sensing portion includingthis magneto-resistive effect element is made by the following method.

Specifically, a manufacturing method according to the present inventioncomprises the steps of a lamination layer film deposition process inwhich at least a free layer made of a soft magnetic material of whichthe magnetization is rotated in response to an external magnetic field,a fixed layer made of a ferromagnetic material, an antiferromagneticlayer for fixing the magnetization of this fixed layer and a spacerlayer interposed between the free layer and the fixed layer, i.e., anonmagnetic conductive layer or a tunnel barrier layer are deposited ona substrate to form a lamination layer deposited film, a patterningprocess in which a lamination layer structure portion in which opposingside surfaces are comprised of one plane or continuous one curvedsurface is formed by continuously patterning at least theabove-described free layer and the above-described fixed layer with thesame mask and in which side end faces of the free layer and the fixedlayer are opposed to the side surface of the lamination layer structureportion and a process in which a hard magnetic layer of high resistanceor low resistance for maintaining a magnetic stability of the free layeris formed in direct contact with the opposing side surfaces or throughan insulating layer, thereby comprising the magneto-resistive effectelement or the magnetic head including the magnetic sensing portionformed of this magneto-resistive effect element.

Further, a manufacturing method according to the present inventioncomprises a film deposition process in which at least a lamination layerdeposited film of first and second fixed layers made of ferromagneticmaterials, first and second antiferromagnetic layers for fixing themagnetizations of these fixed layers and first and second spacer layersinterposed between the free layer and the first and second fixed layers,i.e., nonmagnetic conductive layers or tunnel barrier layers isdeposited on a substrate across both surfaces of a free layer made of asoft magnetic material of which the magnetization is rotated in responseto an external magnetic field is deposited on a substrate, a patterningprocess in which a lamination layer structure portion in which opposingside surfaces are comprised of one plane or continuous one curvedsurface is formed by continuously and simultaneously patterningrespective layers over at least the free layer comprising thislamination layer deposited film, the first and second spacer layersdisposed across this free layer and the first and second fixed layersand in which side end faces of the respective layers thus treated bypatterning are opposed to the above-mentioned side surfaces and aprocess in which a hard magnetic layer of low resistance or highresistance for maintaining a magnetic stability of the free layer isdisposed on opposing side surfaces through or not through the insulatinglayer, thereby comprising the magnetic head including the magneticsensing portion formed of the magneto-resistive effect element accordingto the present invention.

In the above-mentioned magneto-resistive effect element and theabove-mentioned magnetic head, the hard magnetic layer and the freelayer are disposed with a positional relationship such that the centralportions of the hard magnetic layer and the free layer in the filmthickness directions may substantially agree with each other.

In the magnetic head including the magnetic sensing portion formed ofthe above-mentioned magneto-resistive effect element having the SVMRconfiguration or the TMR configuration according to the presentinvention, since opposing side surfaces are formed as one plane or onecontinuous curved surface and are substantially the same in width in atleast the free layer into which the external magnetic field isintroduced and the nearby portions, i.e., the nonmagnetic conductivelayer serving as substantially the operation portion which can achievethe magneto-resistive effect or the tunnel barrier layer and the fixedlayer, the width of this portion can be reduced necessarily andsufficiently and the sense current can be concentrated so that themagneto-resistive effect can be increased. Therefore, the magnetic headin which a detection output of a signal magnetic field from a magneticrecording medium can be increased can be comprised of themagneto-resistive effect element which can detect the external magneticfield with high sensitivity.

Further, as described above, in the magneto-resistive effect element andthe magnetic head, when the positional relationship between the hardmagnetic layer and the free layer is selected in such a manner that thecentral portion of both of the hard magnetic layer and the free layer inthe film thickness directions may substantially agree with each other,the magnetic field from the hard magnetic layer can be effectivelyapplied to the free layer and the stability of the free layer can beimproved more.

Specifically, the hard magnetic layer, i.e., the hard magnetic layerwhich is bias-magnetized relative to the free layer is served as a biashard magnetic layer in which a magnetic domain produced in the endportion of the free layer is canceled to improve a Barkhausen noise inwhich magnetization rotation in the free layer becomes discontinuousrelative to the external magnetic field. In order to cancel the magneticdomain from the free layer, a product Mr_(H)×t_(H) of a residualmagnetization Mr_(H) of the hard magnetic layer and its thickness t_(H)should be selected to be equal to or greater than a product Ms_(F)×t_(F)of a saturation magnetization MS_(F) of the free layer and its thicknesst_(F).

However, in general, since the residual magnetization Mr_(H) of the hardmagnetic layer material falls within a range of from approximately 300to 700 emu/cm³ and the saturation magnetization Ms_(F) of the free layerfalls within a range of from approximately 800 to 1300 emu/cm³, it isinevitable that the thickness t_(H) of the hard magnetic layer isconsiderably large as compared with the thickness t_(F) of the freelayer.

Therefore, assuming now that the free layer and the hard magnetic layerare flush with each other on the same plane, then when a magnetic fieldfrom the thick hard magnetic layer is applied to the thin free layer,the free layer is applied with substantially only the magnetic fieldfrom extremely one portion of the bottom surface, for example, of thehard magnetic layer. There is then the risk that a magnetic field cannotbe applied with high efficiency. There arises a problem that a magneticdomain cannot be canceled satisfactorily.

On the other hand, when the positional relationship between the hardmagnetic layer and the free layer is selected in such a manner that thecentral portions of both of the hard magnetic layer and the free layerin the film thickness directions substantially agree with each other,i.e., the planes in which both of the hard magnetic layer and the freelayer are disposed are not flush with each other, the magnetic fieldfrom the hard magnetic layer can be applied to the free layereffectively and effects for canceling magnetic domains of other portionsof the free layer can be improved more. Thus, the stability of the freelayer, accordingly, the improvement of the Barkhausen noise can beincreased.

Furthermore, according to the above-mentioned manufacturing method ofthe present invention, since this substantial operation portion can beformed by a series of patterning with the same pattern, i.e., the samemask, the manufacturing can be simplified.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a schematic plan view in a process of an example of amanufacturing method according to the present invention.

FIG. 2 is a schematic cross-sectional view taken along the line A-A inFIG. 1.

FIG. 3 is a schematic cross-sectional view in a process of an example ofa manufacturing method according to the present invention.

FIG. 4 is a schematic cross-sectional view in a process of an example ofa manufacturing method according to the present invention.

FIG. 5 is a schematic plan view in a process of an example of amanufacturing method according to the present invention.

FIG. 6 is a schematic cross-sectional view taken along the line A-A inFIG. 5.

FIG. 7 is a schematic cross-sectional view taken along the line B-B inFIG. 5.

FIG. 8 is a schematic plan view in a process of an example of amanufacturing method according to the present invention.

FIG. 9 is a schematic cross-sectional view taken along the line A-A inFIG. 8.

FIG. 10 is a schematic cross-sectional view taken along the line B-B inFIG. 8.

FIG. 11 is a schematic cross-sectional view in a process of an exampleof a manufacturing method according to the present invention.

FIG. 12 is a schematic plan view in a process of an example of amanufacturing method according to the present invention.

FIG. 13 is a schematic cross-sectional view taken along the line A-A inFIG. 12.

FIG. 14 is a schematic cross-sectional view in a process of an exampleof a manufacturing method according to the present invention.

FIG. 15 is a schematic cross-sectional view in a process of an exampleof a manufacturing method according to the present invention.

FIG. 16 is a schematic plan view in a process of an example of amanufacturing method according to the present invention.

FIG. 17 is a schematic cross-sectional view taken along the line A-A inFIG. 16.

FIG. 18 is a schematic plan view of a magnetic head usingmagneto-resistive effect according to an embodiment of the presentinvention.

FIG. 19 is a schematic cross-sectional view taken along the line A-A inFIG. 18.

FIG. 20 is a schematic cross-sectional view of a magnetic head usingmagneto-resistive effect according to other embodiment of the presentinvention.

FIG. 21 is a schematic perspective view of an example of a recording andreproducing magnetic head using the magnetic head according to thepresent invention.

FIG. 22 is a schematic plan view of a process of other example of amanufacturing method according to the present invention.

FIG. 23 is a schematic cross-sectional view taken along the line A-A inFIG. 22.

FIG. 24 is a schematic plan view of a process of other example of amanufacturing method according to the present invention.

FIG. 25 is a schematic cross-sectional view taken along the line A-A inFIG. 24.

FIG. 26 is a schematic plan view of a process of other example of amanufacturing method according to the present invention.

FIG. 27 is a schematic cross-sectional view taken along the line A-A inFIG. 26.

FIG. 28 is a schematic plan view of a process of an example of otherembodiment according to the present invention.

FIG. 29 is a schematic cross-sectional view taken along the line A-A inFIG. 28.

FIG. 30 is a schematic cross-sectional view taken along the line B-B inFIG. 28.

FIG. 31 is a schematic cross-sectional view of a process of otherexample of a manufacturing method according to the present invention.

FIG. 32 is a schematic cross-sectional view of a process of otherexample of a manufacturing method according to the present invention.

FIG. 33 is a schematic plan view of a process of other example of amanufacturing method according to the present invention.

FIG. 34 is a schematic cross-sectional view taken along the line A-A inFIG. 33.

FIG. 35 is a schematic cross-sectional view of a process of otherexample of a manufacturing method according to the present invention.

FIG. 36 is a schematic plan view of a process of other example of amanufacturing method according to the present invention.

FIG. 37 is a schematic cross-sectional view taken along the line A-A inFIG. 36.

FIG. 38 is a schematic plan view of an example of a magnetic head usingmagneto-resistive effect according to the present invention.

FIG. 39 is a schematic cross-sectional view taken along the line A-A inFIG. 38.

FIG. 40 is a schematic plan view of other example of a magnetic headusing magneto-resistive effect according to the present invention.

FIG. 41 is a schematic plan view of a process of a further example of amanufacturing method according to the present invention.

FIG. 42 is a schematic cross-sectional view taken along the line A-A inFIG. 41.

FIG. 43 is a schematic cross-sectional view of a process of a furtherexample of a manufacturing method according to the present invention.

FIG. 44 is a schematic cross-sectional view of a process of a furtherexample of a manufacturing method according to the present invention.

FIG. 45 is a schematic cross-sectional view of a process of a furtherexample of a manufacturing method according to the present invention.

FIG. 46 is a schematic cross-sectional view of a process of a furtherexample of a manufacturing method according to the present invention.

FIG. 47 is a schematic cross-sectional view of a process of a furtherexample of a manufacturing method according to the present invention.

FIG. 48 is a schematic cross-sectional view of a process of a furtherexample of a manufacturing method according to the present invention.

FIG. 49 is a schematic plan view of a process of a further example of amanufacturing method according to the present invention.

FIG. 50 is a schematic cross-sectional view taken along the line A-A inFIG. 49.

FIG. 51 is a schematic cross-sectional view taken along the line B-B inFIG. 49.

FIG. 52 is a schematic plan view of a process of a further example of amanufacturing method according to the present invention.

FIG. 53 is a schematic cross-sectional view taken along the line A-A inFIG. 52.

FIG. 54 is a schematic cross-sectional view taken along the line B-B inFIG. 52.

FIG. 55 is a schematic cross-sectional view of a process of a furtherexample of a manufacturing method according to the present invention.

FIG. 56 is a schematic cross-sectional view of a process of a furtherexample of a manufacturing method according to the present invention.

FIG. 57 is a schematic plan view of a process of a further example of amanufacturing method according to the present invention.

FIG. 58 is a schematic cross-sectional view taken along the line A-A inFIG. 57.

FIG. 59 is a schematic cross-sectional view taken along the line B-B inFIG. 57.

FIG. 60 is a schematic cross-sectional view of a process of a furtherexample of a manufacturing method according to the present invention.

FIG. 61 is a schematic cross-sectional view of a process of a furtherexample of a manufacturing method according to the present invention.

FIG. 62 is a schematic plan view of a process of a further example of amanufacturing method according to the present invention.

FIG. 63 is a schematic cross-sectional view taken along the line A-A inFIG. 62.

FIG. 64 is a schematic cross-sectional view taken along the line B-B inFIG. 62.

FIG. 65 is a schematic cross-sectional view of a further example of amagnetic head using magneto-resistive effect according to the presentinvention.

FIG. 66 is a schematic plan view of other example of a magnetic headusing magneto-resistive effect according to the present invention.

DETAILED DESCRIPTION OF THE PRESENTLY PREFERRED EMBODIMENTS

A magnetic head using magneto-resistive effect using a magneto-resistiveeffect element (GMR element) according to the present invention as amagnetic sensing portion according to several embodiments of the presentinvention will be described with reference to the drawings. Although thesheets of drawings illustrate a single magnetic head element, in actualpractice, a plurality of magnetic head elements can be formedsimultaneously on a common substrate, these magnetic head elements canbe diced to provide respective magnetic head elements and a plurality ofmagnetic heads can be constructed at the same time.

First Embodiment

An embodiment will be described with reference to FIGS. 1 to 17 inconjunction with a manufacturing method according to an embodiment ofthe present invention.

In this embodiment, there are constructed a GMR element having an SVMRconfiguration and a magnetic head having this element.

As FIG. 1 shows a schematic plan view and FIG. 2 shows a schematiccross-sectional view taken along the line A-A, there is prepared asubstrate 1 made of AlTiC (AlTiC) having a thickness of 2 mm, forexample, on which there is deposited a first shield and electrode layer2 made of NiFe having a thickness of 2 μm serving as one magnetic shieldlayer of a finally obtained magnetic head and which constructs oneelectrode by plating.

Then, on the first shield and electrode layer 2, there are deposited andlaminated a nonmagnetic layer 3 comprising a lower gap layer, a freelayer and magnetic flux introducing layer 4 serving as a free layer inthe SVMR configuration and which comprises an external magnetic fieldintroducing layer, the spacer layer 5, a fixed layer 6, aantiferromagnetic layer 7, a protective layer, i.e., a capping layer 8,each having a conductivity, in that order, by sputtering.

The nonmagnetic layer 3 is made of a Cu having a thickness of 27 nm, forexample, and the free layer and magnetic flux introducing layer 4 can bemade up of a bilayer structure of an NiFe layer having a thickness of 5nm and a CoFe layer having a thickness of 2 nm.

Moreover, according to the SVMR configuration in this example, thespacer layer 5 can be comprised of a nonmagnetic conductive layer madeof a Cu layer having a thickness of 3 nm, for example.

The fixed layer 6 can be made up of a trilayer structure of a CoFe layerhaving a thickness of 2 nm, a Ru layer having a thickness of 1 nm and aCoFe layer having a thickness of 3 nm, for example.

The antiferromagnetic layer can be comprised of a PtMn layer having athickness of 15 nm, and the protective layer 8 can be comprised of a Talayer having a thickness of 3 nm, for example.

On this lamination layer film, i.e., on the protective layer 8, there isformed a finally-constructed stripe-like mask 9 which is extended in thewidth direction (Wd direction) of a magnetic head crossing the depthdirection shown by an arrow Dp in FIG. 1.

This mask 9 serves as a mask for use in the later patterning on thelamination layer film and also serves as a mask for the later liftoff.This mask is formed as a stripe-like mask having a depth of 100 nm and awidth W of 500 nm by coating a photoresist layer, photolithography,i.e., pattern exposure and development.

Next, as FIG. 3 shows a cross-sectional view corresponding to theabove-mentioned cross-section taken along the line A-A, while this mask9 is being used as an etching mask in the patterning process, theprotective layer 8, the antiferromagnetic layer 7, the fixed layer 6 andthe spacer layer 5 are patterned by ion milling using a high-sensitivityend detector such as an SIMS (Secondary Ion Mass Spectrometer), therebyforming a stripe-like lamination layer structure portion S1 which isextended in the width direction.

As FIG. 4 shows a cross-sectional view corresponding to theabove-mentioned cross-section taken along the line A-A, an insulatinglayer 10 made of Al₂O₃ having a thickness of 27 nm, for example, isdeposited on the whole surface of a groove G1 portion in which the freelayer and magnetic flux introducing layer 4 is exposed around theportion in which the stripe-like lamination layer structure portion S1is formed by sputtering. In this case, since the mask 9 is used as aliftoff mask, the thickness of this mask should, of course, be selectedin such a manner that the insulating layer 10 on the free layer andmagnetic flux introducing layer 4 and the insulating layer 10 on themask 9 can be separated from each other.

As FIG. 5 shows a schematic plan view and FIGS. 6 and 7 show schematiccross-sectional views taken along the line A-A and the line B-B in FIG.5, first, the mask 9 is removed and the insulating layer 10 deposited onthis mask 9 is lifted off, whereafter the surface is formed as a flatsurface by planarization.

Then, on this flat surface, there is formed a stripe-like mask 11serving as a mask for patterning and which serves as a mask for thelater liftoff across the central portion of the stripe-like laminationlayer structure portion S1 and which is extended in the depth directionperpendicular to the width direction. This mask 11 has a length L of 700nm in the depth direction, for example, and a width of 100 nm and canexpect a maximum difference of 100 nm caused by alignment accuracy of anexposure mask of an exposure system in photolithography. This mask 11can be formed by a similar method to that of the mask 9.

Next, as FIG. 8 shows a schematic plan view and FIGS. 9 and 10 showschematic cross-sectional views taken along the line A-A and the lineB-B in FIG. 8, while the mask 11 is being employed as a patterning mask,the insulating layer 10, the protective layer 8, the antiferromagneticlayer 7, the fixed layer 6, the spacer layer 5 and further the freelayer and magnetic flux introducing layer 4 are patterned by ionmilling, for example, and a groove G2 with a predetermined depth isformed so as to leave the nonmagnetic layer 3 with a predeterminedthickness, whereby a stripe portion S2 is formed.

When the depth of the ion milling for this nonmagnetic layer 3 iscontrolled, speed of this ion milling has been measured in advance sothat the depth of the ion milling can be controlled by controlling atime, for example. According to the SIMS, the nonmagnetic layer 3 isformed as a bilayer structure made of materials of different kinds sothat the depth of the ion milling can be controlled by controlling thethickness of the upper layer.

In this manner, while the stripe-like free layer and magnetic fluxintroducing layer 4 is left along the stripe portion S2, the spacerlayer 5, the fixed layer 6 and the antiferromagnetic layer 7 and theprotective layer 8 are left only at the portion in which theaforementioned stripe-like lamination layer structure portion S1 and thestripe portion S2 cross each other, wherein there is formed thelamination layer structure portion 12 having the SVMR configuration ofsmall area.

Then, since the two side surfaces 13 which cross the width direction ofthis lamination layer structure portion 12 are formed by the patterningof the stripe portion S2, i.e., the same patterning process, by the sidesurface 13, the side end faces of the lamination layer structure portion12 and which cross the respective width directions of the free layer andmagnetic flux introducing layer 4, the spacer layer 5, the fixed layer6, the antiferromagnetic layer 7 and the protective layer 8 are formedon one plane or one curved surface formed by the above-mentionedpatterning. That is, although the patterning of the stripe portion S2 isformed by the patterning such as ion milling as described above, theside surface 13 is formed with an inclined surface or a curved surfacebased upon this patterning method, conditions and the like. This sidesurface 13 is formed as one plane or continuous curved surface.Specifically, the protective layer 8, the antiferromagnetic layer 7, thefixed layer 6, the spacer layer 5 and the free layer and magnetic fluxintroducing layer 4 in the lamination layer structure portion 12 areformed with substantially the same width.

Next, as FIG. 11 shows a schematic cross-sectional view whichcorresponds to the above-mentioned cross-section taken along the lineA-A, a hard magnetic layer 14 made of Co-γ Fe₂O₃ of high resistancehaving a thickness of 29 nm, for example, is deposited on the wholesurface of the groove G2 by sputtering.

Further, a nonmagnetic insulating layer 15 such as Al₂O₃ is formed onthe whole surface of this hard magnetic layer 14.

Thereafter, the mask 11 is removed, the hard magnetic layer 14 and theinsulating layer 15 are lifted off and the surface may be made flat byplanarization.

Further, as FIG. 12 shows a schematic plan view and FIG. 13 shows aschematic cross-sectional view taken along the line A-A in FIG. 12, amask 16 having a predetermined width and a predetermined depth whichserves as a similar patterning mask and which also serves as a lift-offmask is formed on the insulating layer 15 so as to cover the stripeportion S2 by photoresist of photolithography, for example.

As FIG. 14 show a cross-sectional view corresponding to theabove-mentioned cross-section taken along the line A-A, a groove G3 isformed by removing the portion which is not covered with this mask 16according to ion milling, for example.

As FIG. 15 shows a cross-sectional view corresponding to theabove-mentioned cross-section taken along the line A-A, an insulatinglayer 18 made of Al₂O₃, for example, is formed on the whole surfaceincluding the groove G3 and the mask 16 is removed, on which theinsulating layer 18 is lifted off and the surface is made flat byplanarization.

As FIG. 16 shows a schematic plan view and FIG. 17 shows a schematiccross-sectional view taken along the line A-A, a second shield andelectrode layer 19 having a thickness of 2 μm, for example, is formed onthe flattened surface by NiFe plating.

Then, the block thus formed is diced along a cutting line shown by adot-and-dash line a in FIGS. 16 and 17, and a front surface 20 servingas a surface which is brought in contact with or is opposed to amagnetic recording medium by polishing as FIG. 18 shows a schematic planview and FIG. 19 shows a schematic cross-sectional view taken along theline A-A.

Thereafter, the antiferromagnetic layer 7 is magnetized at its surfaceon the fixed layer 6 side to the magnetic flux introducing directionwith application of a magnetic field of 10 kOe parallel to the magneticflux introducing direction, i.e., external magnetic field applicationdirection at 250° C. in the vacuum, for example.

Moreover, a uniaxial magnetic induction anisotropy is given to the freelayer and magnetic flux introducing layer 4 with application of amagnetic field of 1 koe in the direction perpendicular to the magneticflux introducing direction at 200° C. in the atmosphere, for example.

Further, a magnetic field of 10 koe is applied to the directionperpendicular to the magnetic flux introducing direction in theatmosphere at a room temperature, whereby the hard magnetic layer 14 ismagnetized in the direction extending along the plane direction and alsoin the direction intersecting the direction in which the stripe portionS2 is extended.

In this manner, there is formed the GMR element 21 in which thelamination layer structure portion 12 having the SVMR configurationincluding the stripe-like free layer and magnetic flux introducing layer4 and the free layer and magnetic flux introducing layer 4, the spacerlayer (nonmagnetic conductive layer) 5, the fixed layer 6 and theantiferromagnetic layer 7 sequentially laminated with each other in thelimited area at the position entered from the front surface 20 into thedepth advanced by a predetermined distance is formed. There isconstructed a magnetic head using magneto-resistive effect 22 having theSVMR configuration using this element as a magnetic sensing portionaccording to the present invention.

The resultant hard magnetic layer 14 is formed in such a manner that thefree layer, i.e., in this example, the free layer and magnetic fluxintroducing layer 4 may be opposed to substantially the center of thethickness direction of the hard magnetic layer 15, i.e., the centralportions thereof substantially agree with each other with respect to thethickness direction by selecting the thickness of the hard magneticlayer and the depth of the groove G3. Specifically, the hard magneticlayer 14 and the surfaces in which the respective layers of the freelayer and magnetic flux introducing layer 4 are formed may not agreewith each other.

In this connection, MS_(F)×t_(F) in this free layer and magnetic fluxintroducing layer 4 obtained when the free layer and magnetic fluxintroducing layer 4 is comprised of the CoFe layer having the thicknessof 2 nm and the NiFe layer having the thickness of 5 nm as describedabove becomes 0.66 emu/cm³, and Mr_(H)×t_(H) of the hard magnetic layerobtained when the hard magnetic layer 14 is comprised of a Co-γ Fe₂O₃having a thickness of 29 nm becomes 0.73 emu/cm³.

The GMR element according to the present invention, i.e., themagneto-resistive effect element and the magnetic head usingmagneto-resistive effect 22 have the CPP configuration in which a sensecurrent Is flows through the first and second shield and electrodelayers 2 and 19 from one to the other, i.e., the sense current flowsthrough the lamination layer direction of the lamination layer structureportion 12.

Moreover, in this magnetic head 22, the front surface 20 thereof isbrought in contact with or is opposed to a magnetic recording medium.This front surface 20 serves as a so-called ABS (Air Bearing Surface)surface when the magnetic head 22, for example, can be lifted up by airflow generated when the magnetic head is moved in a relative fashion tothe magnetic recording medium.

Then, the tip end of the free layer and magnetic flux introducing layer4 is opposed to this front surface 20. An external magnetic field, i.e.,in the magnetic head, a signal magnetic field based upon magneticrecording on the magnetic recording medium is introduced from this tipend, introduced into the lamination layer structure portion 12 which isformed at the position advanced from this front surface 20 to the depthdirection by the predetermined distance to cause a spin-dependencescattering to occur relative to the above-mentioned sense current Is.That is, the change of resistance is generated and this change ofresistance is generated as an electrical output based upon the sensecurrent Is.

As described above, since the magneto-resistive effect element, i.e.,the magnetic head using magneto-resistive effect using the GMR elementas the magnetic sensing portion can exhibit the characteristic of theCPP configuration, i.e., can decrease the resistance by causing thesense current to flow through the film thickness direction, their areacan be reduced and their density can be increased. Moreover, since thefirst and second shield and electrode layers 2 and 19 having high heatconductivity are thermally disposed close to each other across thelamination layer structure portion 12, they have the highly-reliableconfiguration which is high in heat radiation effect and which cancontinue stable operations.

Then, further, according to the present invention, since the sidesurfaces of the respective layers of the lamination layer structureportion 12 are formed as the side surface 13 which substantially formsthe same plane, similarly to the above-mentioned manufacturing methodaccording to the present invention, the respective layers of the samepattern can be formed by the same process and the manufacturing can besimplified.

Moreover, as described above, since a relationship between the hardmagnetic layer 14 and the free layer and magnetic flux introducing layer4 is selected to be a positional relationship such that central portionsof the hard magnetic layer and the free layer and magnetic fluxintroducing layer in the film thickness directions substantially agreewith each other, as mentioned before, the magnetic field from the hardmagnetic layer 14 can be effectively applied to the free layer and hencethe stability of the free layer can be increased more.

Moreover, since the above-mentioned magnetic head configuration is theshield type configuration in which the front end faces of the first andsecond shield and electrode layers 2 and 19 are disposed so as to opposeto the front surface 20, introduction of the external magnetic field islimited so that the magnetic head having high resolution can beconstructed.

Moreover, according to the above-mentioned configuration, since thestripe portion S1 at its portion behind the lamination layer structureportion 12, i.e., the portion opposite to the front surface 20 isoperated as the magnetic flux introducing layer, magnetic flux leakedfrom the lamination layer structure portion 12 to the magnetic shieldlayer, in this case, the shield and electrode layers 2 and 19 can bedecreased, and hence efficiency of magneto-resistive effect can beimproved.

While the hard magnetic layer 14 is made of the high-resistance materialin the above-mentioned example, when this hard magnetic layer 14 is madeof a low-resistance material, e.g., CoCrPt, as FIG. 20 shows a schematiccross-sectional view corresponding to FIG. 19, after the groove G3 hasbeen formed, an insulating layer such as SiO₂ and SiN is deposited, onwhich the hard magnetic layer 14 is deposited, thereby making itpossible to avoid the sense current Is between the first and secondshield and electrode layers 2 and 19 from being leaked through the hardmagnetic layer 14.

The inventive magnetic head using the inventive GMR element as themagnetic sensing portion, i.e., the reproducing magnetic head 22 can beconstructed as a magnetic recording and reproducing head by laminatingan electromagnetic induction type thin-film magnetic recording head 30onto the inventive reproducing magnetic head as FIG. 21 shows aschematic perspective view. This example is the case in which there isused the magnetic head using magneto-resistive effect 22 having theconfiguration shown in FIGS. 18 and 19.

In this example, on the second shield and electrode layer 19, there isformed a nonmagnetic layer 31 made of SiO₂ or the like, for example,comprising the magnetic gap of the recording head 30 in the portionwhich is opposed to the front surface 20.

Then, a coil 32 which is comprised of a conductive layer, for example,by patterning is formed on the rear portion. This coil 32 is coated withan insulating layer, and a through-hole 33 is bored at the centralportion of this coil 32 through the insulating layer and the nonmagneticlayer 31 to expose the second shield and electrode layer 19.

On the other hand, the front end of the front surface 20 is opposed ontothe nonmagnetic layer 31, and a magnetic core layer 34 is formed incontact with the second shield and electrode layer 19 exposed throughthe through-hole 33 across the portion in which the coil 32 is formed.

In this manner, there is constructed the electromagnetic induction typethin-film recording magnetic head 30 in which the magnetic gap g,prescribed by the thickness of the nonmagnetic layer 31, is formedbetween the front end of the magnetic core layer 34 and the secondshield and electrode layer 19.

A protective layer 35 formed of an insulating layer is formed on thismagnetic head 30 as shown by a dot-and-dash line.

In this manner, the can be constructed the recording and reproducingmagnetic head in which the magneto-resistive effect type reproducingmagnetic head 22 according to the present invention and the thin-filmtype recording head 30 are laminated and integrated with each other.

While the free layer and the magnetic flux introducing layer forintroducing an external magnetic field are comprised of the same layerin the above-mentioned example, these layers can be comprised ofindividual different layers.

While the magneto-resistive effect element or the magnetic head has thestructure in which the free layer and magnetic flux introducing layer 4,the nonmagnetic conductive layer (spacer layer) 5, the fixed layer 6 andthe antiferromagnetic layer 7 are laminated with each other from theside of the substrate 1 in the above-mentioned first embodiment, therecan be constructed a magneto-resistive effect element having alamination layer structure portion based upon a structure in which thisstructure is reversed and a magnetic head configuration using thismagneto-resistive effect element as a magnetic sensing portion.

This embodiment will be described.

Second Embodiment

An embodiment of this case will be described with reference to FIGS. 22to 38 in conjunction with an example of a manufacturing method accordingto the present invention.

First, as FIG. 22 shows a schematic plan view and FIG. 23 shows aschematic cross-sectional view taken along the line A-A in FIG. 22, alsoin this case, there is prepared a substrate 1 made of AlTiC (AlTiC)having a thickness of 2 mm, for example, on which there is formed afirst shield and electrode layer 2 serving as one magnetic shield layerof a finally obtained magnetic head and which comprises one electrode byplating.

Then, on this first shield and electrode layer 2, there are laminatedand deposited an underlayer 41, an antiferromagnetic layer 7, a fixedlayer 6, a nonmagnetic conductive layer of a spacer layer 5 and a freelayer 40, each having a conductivity, in that order, by sputtering.

The first shield and electrode layer 2 can be comprised of NiFe having athickness of 2 μm.

The underlayer 41 can be comprised of Ta having a thickness of 3 nm, forexample.

The antiferromagnetic layer 7 can be comprised of a PtMn layer having athickness of 15 nm, for example.

Moreover, the fixed layer 6 may have a trilayer structure comprising aCoFe layer having a thickness of 3 nm, a Ru layer having a thickness of1 nm and a CoFe layer having a thickness of 2 nm, for example.

The spacer layer 5, i.e., nonmagnetic conductive layer can be comprisedof a Cu layer having a thickness of 3 nm, for example.

The free layer 40 may have a bilayer structure comprising a CoFe layerhaving a thickness of 2 nm and an NiFe layer having a thickness of 1 nm,for example.

Then, a stripe-like mask 9 which extends in the width direction of thefinally obtained magnetic head, for example, is formed on theabove-mentioned lamination layer deposited film, i.e., free layer 40similarly to the first embodiment.

This mask 9 serves as a mask for patterning and lift-off which will beexecuted later on and this mask having a depth L of 100 nm and a width Wof 500 nm is formed of a photoresist layer by photolithography, i.e.,pattern exposure and development.

Next, as FIG. 24 shows a schematic plan view and FIG. 25 shows aschematic cross-sectional view taken along the line A-A in FIG. 24, agroove G1 is formed by patterning the free layer 40, the spacer layer 5,the fixed layer 6 and the antiferromagnetic layer 7 according to etchingusing the mask 9 shown in FIGS. 22 and 23 as a patterning mask, e.g.,ion milling using a high-sensitivity end detector such as SIMS, and astripe-like lamination layer structure portion S1 which is extended inthe width direction encircled by this groove G1 is formed.

Then, an insulating layer 10 such as Al₂O₃ is formed on the wholesurface so as to fill this groove G1. When the mask 9 is removed, thesurface can be made flat by removing the insulating layer from thestripe-like lamination layer structure portion S1 with the insulatinglayer 41 in the groove G1 being left.

As FIG. 26 shows a schematic plan view and FIG. 27 shows a schematiccross-sectional view taken along the line A-A in FIG. 26, a magneticflux introducing layer 42 made of NiFe having a thickness of 4 nm isdeposited on the whole surface on which a protective layer 43 made of Tahaving a thickness of 3 nm and a conductive nonmagnetic layer 44 made ofCu having a thickness of 27 nm which comprises a gap layer aredeposited, in that order, by sputtering, for example.

Then, on the nonmagnetic layer 44, there is formed a stripe-like mask 11which crosses, e.g., becomes perpendicular to the central portion of theextending direction of the previously formed stripe-like laminationlayer structure portion and which extends in the depth direction. Thismask 11 also is formed of the photoresist layer, for example, by thesimilar photolithography so that it may become a mask for use inpatterning and lift-off which will be carried out later on.

This mask 11 has a depth of 500 nm and a width of 100 nm, for example,and there is expected a maximum difference of 100 nm in alignmentaccuracy of an exposure mask of an exposure system in thephotolithography which is required to form the mask 11.

As FIG. 28 shows a schematic plan view and FIGS. 29 and 30 showschematic cross-sectional views taken along the line A-A and line B-B inFIG. 28, a groove G4 is formed by patterning the nonmagnetic layer 44,the protective layer 43, the magnetic flux introducing layer 42, thefree layer 40, the spacer layer 5, the fixed layer 6 and theantiferromagnetic layer 7 up to the surface of the underlayer 41 bypatterning using the mask 11 as the patterning mask according to ionmilling using the above-mentioned high-sensitivity end detector such asSIMS, for example, and a stripe portion S2 is formed.

In this manner, the stripe-like free layer 40 is left along the stripeportion S2. The spacer layer 5, the fixed layer 6, the antiferromagneticlayer 7 and the protective layer 8 are left only on the portion in whichthe aforementioned stripe-like lamination layer structure portion S1 andthe stripe portion S2 cross each other, wherein there is constructed thelamination layer structure portion 12 having the SVMR configuration ofsmall area.

Then, since two side surfaces 13 which cross the width direction of thislamination layer structure portion 12 are formed by the patterning ofthe stripe portion S2, i.e., by the same patterning process, due to theside surfaces 13, the side end faces of the lamination layer structureportion 12 and which cross the respective width directions of the freelayer 40, the spacer layer 5, the fixed layer 6 and theantiferromagnetic layer 7 are formed on one flat surface or one curvedsurface formed by the above-mentioned patterning. Specifically, whilethe stripe portion S2 is formed by the patterning such as ion milling,the side surface 13 is formed as an inclined surface or a curved surfacedepending upon a patterning method, conditions and the like, and thisside surface 13 is formed as one flat surface or a continuous curvedsurface. Specifically, the antiferromagnetic layer 7, the fixed layer 6,the spacer layer 5 and the free layer 40 in the lamination layerstructure portion 12 are formed with nearly, i.e., substantially thesame width.

In this manner, at the portion in which the stripe portion S2 crossesthe aforementioned stripe-like lamination layer structure portion S1,there is formed the lamination layer structure portion 12 having thewidth prescribed by the width of the stripe portion S2 having thepredetermined depth and which includes at least the free layer 40, thespacer layer 5, i.e., nonmagnetic layer, the fixed layer 6 and theantiferromagnetic layer 7. By the side surface 13 of the stripe portionS1, the opposing side surfaces of at least these free layer 40, spacerlayer 5, i.e., nonmagnetic conductive layer, fixed layer 6 andantiferromagnetic layer 7 are formed as the same side surfaces, i.e.,the continuous same surface formed of one flat surface or one curvedsurface formed when the stripe portion S1 is treated by patterning.Specifically, the respective layers of the lamination layer structureportion 12 are formed with substantially the same width.

Next, as FIGS. 31 and 32 show schematic cross-sectional viewscorresponding to the above-mentioned A-A cross-section and B-Bcross-section, a hard magnetic layer 14 made of Co-γ Fe₂O₃ having a highresistance, for example, and an insulating layer 15 made of Al₂O₃, forexample, are deposited on the whole surface by sputtering. Then, themask 11 is removed and the hard magnetic layer 14 and the insulatinglayer 15 are removed from the mask 11, i.e., removed by lift-off,whereby the surfaces of the stripe portion 2 and the hard magnetic layer14 are made flat by planarization.

At that time, although not shown, a nonmagnetic layer and the like maybe deposited before the hard magnetic layer 14, for example, isdeposited according to the need in such a manner that the centralportion of the hard magnetic layer 14 in the thickness direction and thecentral portion of the free layer 40 in the thickness direction becomesubstantially coincident with each other.

As FIG. 33 shows a schematic plan view and FIG. 34 shows a schematiccross-sectional view taken along the line A-A in FIG. 33, a mask 16 witha predetermined width and a predetermined depth serving as a similarpatterning mask and which serves as a lift-off mask as well is made of aphotoresist by photolithography, for example, so as to cover the stripeportion S2.

As FIG. 35 shows a schematic cross-sectional view corresponding to theabove-mentioned cross-sectional view taken along the line A-A, a grooveG5 is formed by removing the portion, which is not covered with thismask 16, according to ion milling, for example.

As FIG. 36 shows a schematic plan view and FIG. 37 shows a schematiccross-sectional view taken along the line A-A, an insulating layer 18 isformed within the groove G5 and the surface is made flat byplanarization.

When this insulating layer 18 is formed, in FIG. 35, the insulatinglayer 18 made of Al₂O₃ is formed on the whole surface including thegroove G5 and the insulating layer 18 is formed on the groove byremoving the mask 16 according to lift-off, although not shown.

Then, a second shield and electrode layer 19 having a thickness of 2 μm,for example, is deposited on this flat surface by NiFe plating.

Then, the block thus formed is diced along a cutting line shown by adot-and-dash line a in FIGS. 36 and 37. As FIG. 38 shows a schematiccross-sectional view and FIG. 39 shows a cross-sectional view takenalong the line A-A in FIG. 38, a surface which is brought in contactwith or is opposed to a magnetic recording medium, e.g., a front surface20 which serves as an ABS is formed by polishing and the magnetic headusing magneto-resistive effect 22 is formed.

Thereafter, with application of a magnetic field of 10 kOe parallel to amagnetic flux introducing direction shown by an arrow F_(L), i.e., thedirection in which an external magnetic field is applied at 250° C. andin the vacuum, for example, the magnetization of the antiferromagneticlayer 7 on the side of the fixed layer 6 is magnetized in the magneticflux introducing direction.

Moreover, in the vacuum and at 200° C., with application of a magneticfield of 1 kOe to the direction perpendicular to the magnetic fluxintroducing direction, a uniaxial magnetic induction anisotropy is givento the free layer 40.

Further, in the atmosphere and at a room temperature, with applicationof a magnetic field of 10 koe to the direction perpendicular to themagnetic flux introducing direction, the hard magnetic layer 14 ismagnetized in the direction extended along its plane direction and whichis the direction crossing the direction in which the stripe portion S2is extended.

In this manner, there is formed the GMR element 21 having the SVMRconfiguration including the stripe-like stripe portion S2, the magneticflux introducing layer 42 in which the front end is formed so as tooppose to the front surface 20 and in which the lamination layerstructure portion 12 having the SVMR configuration magnetically coupledto this magnetic flux introducing layer 42 at the position advanced fromthe front surface 20 to the depth direction by the predetermineddistance and which is comprised of the free layer 40, the spacer layer(nonmagnetic conductive layer) 5, the fixed layer 6 and theantiferromagnetic layer is formed below in the limited area, and thereis constructed the inventive magnetic head using magneto-resistiveeffect 22 having the SVMR configuration which uses this element as amagnetic sensing portion thereof.

Then, the GMR element having this configuration, i.e., themagneto-resistive effect element and the magnetic head usingmagneto-resistive effect 22 also, as shown in FIG. 39, has anconfiguration in which the sense current Is flows through the first andsecond shield and electrode layers 2 and 19 from one to the other, i.e.,the CPP configuration in which the sense current flows through thelamination layer direction of the lamination layer structure portion 12.

Moreover, in this configuration, the tip end of the magnetic fluxintroducing layer 40 is opposed to this front surface 20, and anexternal magnetic field, i.e., in the magnetic head, a signal magneticfield based upon magnetic recording on the magnetic recording medium isintroduced from this tip end. This signal magnetic field is introducedinto the lamination layer structure portion 12 which is formed at theposition advanced from this front surface 20 to the depth direction bythe predetermined distance, thereby causing a spin-dependence scatteringto occur against the above-mentioned sense current Is. Specifically, thechange of resistance is produced and this change of resistance isproduced as an electrical output based upon the sense current Is.

Then, since this configuration is formed as the CPP type configuration,the characteristics of the CPP type configuration can be exhibited,i.e., the configuration has the low resistance because the sense currentflows through the film thickness direction, whereby the configurationcan decrease its area, accordingly, the configuration can increase itsdensity. Also, since the first and second shield and electrode layer 2and 19 having a high heat conductivity are thermally disposed close toeach other across the lamination layer structure portion 12, themagneto-resistive effect element or the magnetic head usingmagneto-resistive effect has the highly-reliable configuration which isexcellent in heat radiation effect and which can continue the stableoperations.

Moreover, since the side surfaces of the respective layers of itslamination layer structure portion 12 are formed as the side surfaces 13which form substantially the same plane, similarly to theabove-mentioned manufacturing method according to the present invention,the respective layers can be formed with the same pattern by the sameprocesses, whereby the manufacturing can be simplified.

Moreover, as described above, since the positional relationship betweenthe hard magnetic layer 14 and the free layer 40 is selected in such amanner that the central portions of both of the hard magnetic layer andthe free layer in the film thickness directions substantially agree witheach other, as mentioned before, the bias magnetic field can effectivelybe applied to the free layer from the thick hard magnetic layer 14,whereby the stability of the free layer can be improved more.

Since Ms_(F)×t_(F) in the free layer 40 obtained when the free layer iscomprised of a CoFe layer having a thickness of 2 nm and an NiFe layerhaving a thickness of 5 nm, for example, becomes 0.66 emu/cm³, when thehard magnetic layer 14 is comprised of a Co-γ Fe₂O₃ layer having athickness sufficiently larger than that of the free layer, e.g., 34 nm,there can be obtained Mr_(H)×t_(H)=0.85 emu/cm³ which is larger than aproduct of the saturation magnetic field and the thickness of the freelayer 40.

Moreover, since the magnetic head using magneto-resistive effect has theshield type configuration in which the front end faces of the first andsecond shield and electrode layers 2 and 19 are opposed to the frontsurface 20, the introduction of the external magnetic field can berestricted so that this magnetic head using magneto-resistive effect canbe constructed as the head which is high in resolution.

Moreover, according to the above-mentioned configuration, since thestripe portion S1 is operated at its portion behind the lamination layerstructure portion 12, i.e., at its portion opposite to the front surface20 as the magnetic flux introducing layer, magnetic flux leaked from thelamination layer structure portion 12 to the magnetic shield layer, inthis example, the shield and electrode layers 2 and 19 can be decreased,and the efficiency of the magneto-resistive effect can be improved.

Moreover, while the hard magnetic layer 14 is made of the highresistance material in the above-mentioned example, when this hardmagnetic layer 14 is made of a material of low resistance, e.g., CoCrPt,as FIG. 40 shows a schematic cross-sectional view corresponding to FIG.39, prior to the hard magnetic layer 14 is formed, there is deposited aninsulating layer 23 made of a suitable material such as SiO₂ and SiN onwhich the hard magnetic layer 14 is formed, thereby making it possibleto avoid the sense current Is, flowing through the first and secondshield and electrode layers 2 and 19, from being leaked from the hardmagnetic layer 14.

Moreover, also in this embodiment, similarly to the description that hasbeen so far made with reference to FIG. 21, the magnetic head usingmagneto-resistive effect can be constructed as a magnetic recording andreproducing head by laminating an electromagnetic induction typethin-film magnetic recording head 30 to this magnetic head usingmagneto-resistive effect.

While the lamination layer structure portion 12 having the SVMRconfiguration is formed as a single SV configuration, free layers of thepair of SVMR configurations may made common and the lamination layerstructure portions having the respective SVMR configurations may beconstructed on both surfaces of the free layer, whereby the detectionoutput of the external magnetic field can be increased.

This embodiment will be described.

Third Embodiment

An example of this case will be described with reference to FIGS. 41 to63.

Also in this case, as FIG. 41 shows a schematic plan view and FIG. 42shows a schematic cross-sectional view taken along the line A-A in FIG.41, there is prepared a substrate 1 made of AlTiC (AlTiC) having athickness of 2 nm on which there is deposited a first shield andelectrode layer 2 made of NiFe having a thickness of 2 μm, for example,serving as one magnetic shield layer of a finally obtained magnetic headand which comprises one electrode by plating, for example.

Then, an underlayer 41, an antiferromagnetic layer 7A, a fixed layer 6,a spacer layer 5A, i.e., nonmagnetic conductive layer, a common freelayer 40, each having conductivity, comprising one SVMR element and aspacer 5B, i.e., nonmagnetic conductive layer, a fixed layer 6B, anantiferromagnetic layer 7B, a protective layer 8, i.e., capping layercomprising the other SVMR element are sequentially laminated anddeposited on this first shield and electrode layer 2 by sputtering.

The underlayer 41 can be comprised of Ta having a thickness of 3 nm, forexample.

The antiferromagnetic layers 7A and 7B can be comprised of PtMn having athickness of 15 nm, for example.

Each of the fixed layers 6A and 6B can be made up of a trilayerstructure of a CoFe layer, a Ru layer having a thickness of 1 nm and aCoFe layer. Then, in this case, the CoFe layer may have at its side inwhich it is brought in contact with the respective spacer layers 5A and5B of the fixed layers 6A and 6B a thickness of 2 nm, and the CoFe layermay have at its opposite side a thickness of 3 nm.

Each of the spacer layers 5A and 5B can be comprised of Cu having athickness of 3 nm.

Moreover, the free layer 41 can be made up of a trilayer structure of aCoFe layer having a thickness of 2 nm, an NiFe layer having a thicknessof 3 nm and a CoFe layer having a thickness of 2 nm, for example.

Moreover, the protective layer 8 can be comprised of Ta having athickness of 3 nm, for example.

On this lamination layer film, i.e., the protective layer 8, there isformed a mask 9 made of photoresist, for example, having a depth of 100nm and a width of 500 nm serving as a patterning mask and a lift-offmask which will be described later on by photolithography.

As FIGS. 43 and 44 show schematic cross-sectional views corresponding tothe above-mentioned cross-sections taken along the line A-A and the lineB-B, a groove G6 is formed by removing the layer portion up to above theunderlayer 41 by using the mask 9 according to patterning, e.g., ionmilling using high-sensitivity end detector such as SIMS, and astripe-like lamination layer portion S1 surrounded by this groove G6 isformed.

Thereafter, as FIGS. 45 and 46 show schematic cross-sectional viewscorresponding to the above-mentioned cross-sections taken along the lineA-A and the line B-B, an insulating layer 50 made of Al₂O₃ having athickness of 22 nm, for example, a magnetic flux introducing layer 42made of NiFe having a thickness of 11 nm, for example, and an insulatinglayer 51 made of Al₂O₃ having a thickness of 25 nm, for example, arelaminated on the whole surface covering the inside of the groove G6, inthat order, by sputtering, for example.

In this case, the insulating layer 50, in particular, is deposited onthe side surface of the stripe-like lamination layer portion S1 with apredetermined depth d by selecting sputtering conditions and bysputtering from the oblique direction.

As FIGS. 47 and 48 show schematic cross-sectional views corresponding tothe above-mentioned cross-sections taken along the line A-A and the lineB-B, the mask 9 is removed, the above-mentioned insulating layer 50,magnetic flux introducing layer 42 and insulating layer 51 formed onthis mask are lifted off, and the insulating layer 50, the magnetic fluxintroducing layer 42 and the insulating layer 51 are filled into thegroove G6 around the stripe-like lamination layer portion S1, whereafterthe surface is made flat by planarization.

As FIG. 49 shows a schematic plan view and FIGS. 50 and 51 showcross-sectional views taken along the line A-A and the line B-B in FIG.49, a mask 11 having a depth of 700 nm and a width of 100 nm servingsimilarly as a patterning mask and a lift-off mask is formed ofphotoresist, for example, across the central portion of the stripe-likelamination layer portion by photolithography.

In this case, since a maximum difference of 100 nm of the patternalignment accuracy is produced in the exposure system in thephotolithography, the widths of the masks 9 and 11 should be selectedtaking such difference into consideration.

As FIG. 52 shows a schematic plan view and FIGS. 53 and 54 showschematic cross-sectional views taken along the line A-A and the lineB-B in FIG. 52, respectively, while the mask 11 is being used as apatterning mask, a groove G7 is formed by etching the portion up to justabove the underlayer 41 by ion milling using a high-sensitivity enddetector such as SIMS, for example.

In this manner, there is formed the stripe portion S2 encircled by thegroove G7 and which is extended in the depth direction.

In the stripe portion S2 thus formed, there is formed a lamination layerstructure portion 12 having a pair of SVMR configurations in which theabove-mentioned antiferromagnetic layer 7A, the fixed layer 6A, thespacer 5A, i.e., the nonmagnetic conductive layer, the common free layer40, the spacer 5B, i.e., nonmagnetic conductive layer, the fixed layer6B, the antiferromagnetic layer 7B and the protective layer 8 arelaminated with each other is formed at the portion in which this stripeportion S2 and the stripe-like lamination layer structure portionobtained before this stripe portion is formed cross each other. As shownin FIG. 56, there is formed a magnetic flux introducing layer 42 whichis extended in the depth direction with a spacing corresponding to athickness d of the insulating layer 50 deposited on the front and rearside surfaces 53F and 53R of the depth direction of the lamination layerstructure portion 12 across the lamination layer structure portion 12.

Thereafter, as FIGS. 55 and 56 show schematic cross-sectional viewscorresponding to the above-mentioned cross-sections taken along the lineA-A and the line B-B, the hard magnetic layer 14 made of Co-γ Fe₂O₃having a thickness of 53 nm, for example, and the insulating layer 15made of Al₂O₃ having a thickness of 35 nm, for example, are deposited onthe whole surface covering the groove G6 around the stripe portion 12 bysputtering, for example, the mask 11 is removed and the hard magneticlayer 14 and the insulating layer 15 are lifted off, whereafter thesurface is made flat by planarization.

As FIG. 57 shows a schematic plan view and FIGS. 58 and 59 showschematic cross-sectional views taken along the line A-A and the lineB-B in FIG. 57, a mask 16 which is used to leave the hard magnetic layer14 on a predetermined portion of this flat surface and which is used toremove other portions is formed by photolithography using a photoresist,for example.

A portion exposed to the outside other than the portion in which themask 16 is formed is removed by ion milling using this mask 16 and agroove G8 is formed as FIGS. 60 and 61 show schematic cross-sectionalviews corresponding to the cross-sections taken along the line A-A andthe line B-B. An insulating layer 18 made of Al₂O₃, for example, isdeposited on the whole surface including this groove G8 by sputtering orthe like, the mask 16 is removed and the insulating layer 18 on thismask is lifted off, whereafter the surface is made flat byplanarization.

Thereafter, a second shield and electrode layer 19 made of NiFe having athickness of 2 μm, for example, is formed on this flat surface formed byplanarization.

Then, the block thus formed is diced along a cutting line shown by adot-and-dash line a in FIGS. 60 and 61. As FIG. 62 shows a schematicplan view and FIGS. 63 and 64 show schematic cross-sectional views takenalong the line A-A and the line B-B in FIG. 62, there is polished afront surface 20 which becomes a surface which is brought in contactwith or is opposed to a magnetic recording medium, e.g., ABS.

Thereafter, in the vacuum and at 250° C., with application of a magneticfield of 10 kOe parallel to the magnetic flux introducing direction,i.e., the direction in which the external magnetic field is applied, thesurface of the antiferromagnetic layer 7 on the side of the fixed layer6 is magnetized in the magnetization magnetic flux introducingdirection, for example.

Moreover, in the vacuum and at 200° C., with application of a magneticfield of 1 kOe in the direction perpendicular to the magnetic fluxintroducing direction, a uniaxial magnetic induction anisotropy is givento the free layer 40.

Further, in the atmosphere and at a room temperature, a magnetic fieldof 10 kOe is applied to the direction perpendicular to the magnetic fluxintroducing direction and the hard magnetic layer 14 is magnetized inthe direction extending along its plane direction and which direction iscrossing the direction in which the stripe portion S2 is extended.

In this manner, the lamination layer structure portion 12 having thepair of SVMR configurations in which the spacer layers (nonmagneticconductive layers) 5A and 5B, the fixed layers 6A and 6B and theantiferromagnetic layers 7A and 7B are sequentially laminated with eachother across the common free layer 40 is limitedly formed at the portionin which the stripe portion S2 and the aforementioned stripe-likelamination layer structure portion S2 cross each other, i.e., thelamination layer structure portion is limitedly formed at the positionadvanced from the front surface 20 to the depth direction by apredetermined distance.

Then, in the forward and the rearward of this lamination layer structureportion 12, the magnetic flux introducing layers 42 are formed at afront side surface 53F and a rear side surface 53R of the laminationlayer structure portion 12 through the insulating layer 50 in such amanner that the front side surface and the rear side surface may becoupled together from a magnetic standpoint and that they may beinsulated from each other from an electrical standpoint.

In this manner, the GMR element 21 is formed, and there is constructedthe inventive magneto-resistive effect head 22 having the SVMRconfiguration using this element as the magnetic sensing portionthereof.

Then, also in the GMR element having this configuration, i.e., themagneto-resistive effect element and the magnetic head usingmagneto-resistive effect 22, as shown in FIG. 63, the sense current Isflows through the first and second shield and electrode layers 2 and 19from one to the other. That is, the magneto-resistive effect element hasthe CPP configuration in which the sense current flows through thelamination layer direction of the lamination layer structure portion 12.

Then, the tip end of the magnetic flux introducing layer 40 is opposedto the front surface 20. An external magnetic field, i.e., in themagnetic head, a signal magnetic field based upon magnetic recording onthe magnetic recording medium is introduced from this tip end andintroduced into the lamination layer structure portion 12 formed at theposition advanced from this front surface 20 to the depth direction bythe predetermined distance, thereby causing a spin-dependence scatteringto occur relative to the above-mentioned sense current Is. Specifically,the change of resistance is produced and this change of resistance isproduced as an electrical output based upon the sense current Is.

Then, in the third embodiment, while the external magnetic field isintroduced into the lamination layer structure portion 12 having theSVMR configuration by the magnetic flux introducing layer 42, since themagnetic flux introducing layers 42 are opposed to the front sidesurface 53F and the rear side surface 53R of the lamination layerstructure portion 12 through the insulating layer 50 having the depth din an electrically isolated opposing fashion, when the magneto-resistiveeffect element has the CPP configuration in which the sense currentflows through the film thickness direction of the lamination layerstructure portion 12 and the magnetic flux introducing layer 42 is madeof the above-mentioned conductive NiFe, it is possible to avoidefficiency from being lowered due to the leakage of the sense current tothe magnetic flux introducing layer 42.

Then, also in the case of this configuration, since themagneto-resistive effect element has the CPP type configuration, thecharacteristics in this CPP configuration can be demonstrated, i.e., thearea of the magneto-resistive effect type element can be reduced by thelow resistance presented when the sense current flows through the filmthickness direction, accordingly, the magneto-resistive effect elementcan increase its density. Also, since the first and second shield andelectrode layers 2 and 19 which are high in heat conductivity arethermally disposed close to each other, the magneto-resistive effectelement has the highly-reliable configuration which is excellent in heatradiation effect and which can continue stable operations.

Moreover, since the side surfaces of the respective layers of thelamination layer structure portion 12 are formed as the side surfaces 13which form substantially the same surface, similarly to theabove-mentioned manufacturing method according to the present invention,the respective layers can be formed with the same pattern by the sameprocess, and the manufacturing can be simplified.

Moreover, as described above, since the positional relationship betweenthe hard magnetic layer 14 and the free layer 40 is selected in such amanner that the central portions of both of the hard magnetic layer andthe free layer in the film thickness directions substantially agree witheach other, as mentioned before, the bias magnetic field can effectivelybe applied to the free layer from the hard magnetic layer 14 and hencethe stability of the free layer can be improved more.

For example, when the free layer 40 has the trilayer structure comprisedof CoFe having a thickness of 2 nm, NiFe having a thickness of 3 nm andCoFe having a thickness of 2 nm, its MS_(F)×t_(F) becomes 0.76 emu/cm³.In the case of the hard magnetic layer 14 made of Co-γ Fe₂O₃, itsthickness is made sufficiently larger than that of the free layer 40,e.g., 53 nm and MS_(H)×t_(H) becomes 1.33 emu/cm³.

Moreover, since the magneto-resistive effect element has the shield typeconfiguration in which the front end faces of the first and secondshield and electrode layers 2 and 19 are opposed to the front surface20, the introduction of the external magnetic field can be restrictedand hence the magnetic head using magneto-resistive effect can beconstructed as a head which is high in resolution.

Further, since the stripe portion 21 is operated at its portion behindthe lamination layer structure portion 12, i.e., at its portion oppositeto the front surface 20 as a magnetic flux induction portion, magneticflux leaked from the lamination layer structure portion 12 to the shieldportion, in this example, the shield and electrode layers 2 and 19 canbe reduced, and hence the magneto-resistive effect can be improved.

While the hard magnetic layer 4 is made of the high-resistance materialin the above-mentioned example, when this hard magnetic layer 14 is madeof a material of low resistance, e.g., CoCrPt, as FIG. 65 shows aschematic cross-sectional view corresponding to FIG. 63, before the hardmagnetic layer 14 is formed, an insulating layer 23 such as SiO₂ and SiNis deposited on which there is formed the hard magnetic layer 14,whereby the sense current Is between the first and second shield andelectrode layers 2 and 19 can be avoided from being leaked through thehard magnetic layer 14.

Moreover, also in this embodiment, similarly to the description that hasbeen so far made with reference to FIG. 21, the magnetic head usingmagneto-resistive effect can be constructed as a magnetic recording andreproducing head by laminating an electromagnetic induction typethin-film magnetic recording head 30, for example, onto the magnetichead using magneto-resistive effect.

While the magneto-resistive effect element having the SVMR configurationand the magnetic head using magneto-resistive effect using thismagneto-resistive effect element as the magnetic sensing portion areconstructed in the above-mentioned respective embodiments, as otherembodiment, a magneto-resistive effect element having a tunnel typemagneto-resistive effect, i.e., TMR configuration and a magnetic headusing magneto-resistive effect using this magneto-resistive effectelement as a magnetic sensing portion can be constructed.

In this TMR configuration, the TMR configuration can be obtained byreplacing the spacer layers 5, 5A, 5B with a tunnel barrier layer formedof an Al₂O₃ layer having a thickness of 0.7 nm, for example, in theaforementioned respective embodiments and their examples.

Moreover, while the lamination layer structure portion 12 is locatedbehind the front surface 20 in the above-mentioned respectiveembodiments and examples, as shown in FIG. 66, the lamination layerstructure portion can be formed at the position in which it is opposedto the front surface 20.

The magneto-resistive effect element and the magnetic head usingmagneto-resistive effect using this magneto-resistive effect element asits magnetic sensing portion and the manufacturing methods thereof arenot limited to the above-mentioned respective embodiments and theseexamples and can be variously modified and changed in the configurationof the present invention.

Since the magnetic head including the magnetic sensing portion formed ofthe above-mentioned magneto-resistive effect element having the SVMRconfiguration or the TMR configuration according to the presentinvention have opposing side surface which are formed as one flatsurface or continuous one curved surface with substantially the samewidth at least in the free layer into which the external magnetic fieldis introduced, the nearby layers, i.e., the spacer layer which serves asthe substantial operating portion which can achieve themagneto-resistive effect, i.e., the nonmagnetic conductive layer or thetunnel barrier layer and in the fixed layer, the width of this portioncan be reduced necessarily and sufficiently, and hence the sense currentcan be concentrated on this SVMR configuration portion or the TMRconfiguration portion, thereby making it possible to increase themagneto-resistive effect. Accordingly, there can be constructed themagneto-resistive effect element which can detect the external magneticfield with high sensitivity or the magnetic head which can increase thedetection output of the signal magnetic field from the magneticrecording medium.

Further, as described above, in the magneto-resistive effect element,when the positional relationship between the hard magnetic layer and thefree layer is selected in such a manner that the central portions ofboth of the hard magnetic layer and the free layer in the film thicknessdirections substantially agree with each other, the magnetic field canbe effectively applied to the free layer from the hard magnetic layer,and hence the stability of the free layer can be improved more.

Specifically, the hard magnetic layer can reliably cancel the magneticdomain produced at the end portion of the free layer and hence aBarkhausen noise which causes the magnetization rotation in the freelayer to become discontinuous against the external magnetic field can beimproved.

Therefore, the magnetic head using magneto-resistive effect using theabove-mentioned magneto-resistive effect element as the magnetic sensingportion thereof can, as has been so far described in the preamble,achieve the characteristics of the CPP type configuration, i.e., thearea can be reduced and the density can be increased. Moreover, sincethe first and second shield and electrode layers which are high in heatconductivity are thermally disposed close to each other across thelamination layer structure portion, the magnetic head usingmagneto-resistive effect has the highly-reliable configuration which ishigh in heat radiation effect and which can continue stable operations.

Then, furthermore, according to the present invention, since the sidesurfaces of the respective layers of its lamination layer structureportion 14 are formed as the side surfaces 13 which form substantiallythe same plane, similarly to the above-mentioned manufacturing methodaccording to the present invention, the respective layers can be formedwith the same pattern by the same process and hence the manufacturingcan be simplified.

1. A method of manufacturing a magnetic head including a magneticsensing portion formed of a magnetoresistive effect element, amagnetoresistive effect magnetic head manufacturing method comprisingthe steps of: depositing, via a film deposition process, a laminationlayer having at least a free layer comprised of a soft magnetic materialof which the magnetization is rotated in response to an externalmagnetic field, a fixed layer comprised of a ferromagnetic material, anantiferromagnetic layer for fixing the magnetization of said fixedlayer, a magnetic flux introducing layer with a tip end of which isopposed to a surface which is brought in contact with or opposed to amagnetic recording medium, and a spacer layer interposed between saidfree layer and said fixed layer; patterning at least said free layer andsaid fixed layer with a single mask such that opposing side surfaces ofsaid free layer and said fixed layer are formed of one continuoussurface; forming hard magnetic layers having high or low resistance formaintaining a magnetic stability of said free layer in contact with saidopposing side surfaces, wherein said fixed layer is in contact with atleast one of said antiferromagnetic layer, said magnetic fluxintroducing layer, and said space layer, and wherein a sense current forsaid lamination layer structure portion is flowing through saidlamination layer in a direction substantially perpendicular to thelayers of the lamination layer; and forming an insulating layer on saidhard magnetic layers and on said opposing side surfaces.
 2. A method ofmanufacturing a magnetic head using magnetoresistive effect according toclaim 1, wherein said spacer layer is comprised of a nonmagneticconductive layer.
 3. A method of manufacturing a magnetic head usingmagnetoresistive effect according to claim 1, wherein said spacer layeris comprised of a tunnel barrier layer.
 4. A method of manufacturing amagnetic head using magnetoresistive effect according to claim 1,wherein said hard magnetic layer and said free layer are disposed insuch a manner that a central portion in the thickness direction of saidhard magnetic layer agrees substantially with a central portion in thethickness direction of said free layer.
 5. A method of manufacturing amagnetic head using magnetoresistive effect according to claim 1,wherein said free layer is served as said magnetic flux introducinglayer as well.
 6. A method of manufacturing a magnetic head usingmagnetoresistive effect according to claim 1 wherein the opposing sidesurface of the free layer and the fixed layer are a continuous curvedsurface.
 7. A method of manufacturing a magnetic head including amagnetic sensing portion formed of a magnetoresistive effect element, amagnetoresistive effect magnetic head manufacturing method comprisingthe steps of: depositing, via a film deposition process, a laminationlayer having a plurality of layers including a free layer comprised of asoft magnetic material of which the magnetization is rotated in responseto an external magnetic field, a fixed layer comprised of aferromagnetic material, an antiferromagnetic layer for fixing themagnetization of said fixed layer, a magnetic flux introducing layerwith a tip end of which is opposed to a surface which is brought incontact with or opposed to a magnetic recording medium, and a spacerlayer interposed between said free layer and said fixed layer;patterning at least said free layer and said fixed layer with a masksuch that opposing side surfaces of said free layer and said fixed layerare formed of one continuous surface; forming hard magnetic layershaving high or low resistance for maintaining a magnetic stability ofsaid free layer in contact with said opposing side surfaces, said hardmagnetic layers having a substantially uniform thickness and beingformed such that a central portion, in the thickness direction, of saidhard magnetic layers is substantially aligned and in contact with acentral portion, in the thickness direction, of said free layer; andforming an insulating layer on said hard magnetic layers and on saidopposing side surfaces.
 8. A method of manufacturing a magnetic headusing magnetoresistive effect according to claim 7, wherein said spacerlayer is comprised of a nonmagnetic conductive layer.
 9. A method ofmanufacturing a magnetic head using magnetoresistive effect according toclaim 7, wherein said spacer layer is comprised of a tunnel barrierlayer.
 10. A method of manufacturing a magnetic head usingmagnetoresistive effect according to claim 7, wherein said free layerserves as said magnetic flux introducing layer as well.
 11. A method ofmanufacturing a magnetic head using magnetoresistive effect according toclaim 7 wherein the opposing side surface of the free layer and thefixed layer are a continuous curved surface.
 12. A method ofmanufacturing a magnetic head including a magnetic sensing portionformed of a magnetoresistive effect element, a magnetoresistive effectmagnetic head manufacturing method comprising the steps of: depositing,via a film deposition process, a lamination layer having at least a freelayer comprised of a soft magnetic material of which the magnetizationis rotated in response to an external magnetic field, a fixed layercomprised of a ferromagnetic material, an antiferromagnetic layer forfixing the magnetization of said fixed layer, a magnetic fluxintroducing layer with a tip end of which is opposed to a surface whichis brought in contact with or opposed to a magnetic recording medium,and a spacer layer interposed between said free layer and said fixedlayer; patterning at least said free layer and said fixed layer with asingle mask such that opposing side surfaces of said free layer and saidfixed layer are formed of one continuous surface; forming hard magneticlayers having high or low resistance for maintaining a magneticstability of said free layer in contact with said opposing sidesurfaces, wherein said fixed layer is in contact with at least one ofsaid antiferromagnetic layer, said magnetic flux introducing layer, andsaid space layer, and wherein a sense current for said lamination layerstructure portion is flowing through each of the layers of saidlamination layer; and forming an insulating layer on said hard magneticlayers and on said opposing side surfaces.
 13. A method of manufacturinga magnetic head using magnetoresistive effect according to claim 12,wherein said spacer layer is comprised of a nonmagnetic conductivelayer.
 14. A method of manufacturing a magnetic head usingmagnetoresistive effect according to claim 12, wherein said spacer layeris comprised of a tunnel barrier layer.
 15. A method of manufacturing amagnetic head using magnetoresistive effect according to claim 12,wherein said hard magnetic layer and said free layer are disposed insuch a manner that a central portion in the thickness direction of saidhard magnetic layer agrees substantially with a central portion in thethickness direction of said free layer.
 16. A method of manufacturing amagnetic head using magnetoresistive effect according to claim 12,wherein said free layer is served as said magnetic flux introducinglayer as well.